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The Transition to Optical Wafer Flatness Metrology
Author(s) -
J. F. Valley
Publication year - 2003
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.1622504
Subject(s) - metrology , flatness (cosmology) , wafer , lithography , dimensional metrology , mechanical engineering , materials science , engineering , electronic engineering , manufacturing engineering , optics , optoelectronics , physics , cosmology , quantum mechanics
As optical lithography requirements drive wafer flatness toward increasing levels of perfection, the industry is faced with a need to transition from current standard practice. In this paper we present a historical perspective on starting material dimensional metrology, leading to the current standard for wafer manufacturing quality control, capacitance‐based wafer flatness metrology. We then investigate the market and technical factors that compel a transition to optical flatness metrology. Comparative data (from advanced 300mm wafers) between capacitive and optical flatness measurement tools permits us to conclude that the industry transition to optical dimensional metrology can occur without disruption of accepted manufacturing baselines.

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