Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction | Zendy

S. Martini | Zendy; A. A. Quivy | Zendy; M. J. da Silva | Zendy; T. E. Lamas | Zendy; E. C. F. da Silva | Zendy; J. R. Leite | Zendy; E. Abramof | Zendy

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Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction

Author(s) -

S. Martini,

A. A. Quivy,

M. J. da Silva,

T. E. Lamas,

E. C. F. da Silva,

J. R. Leite,

E. Abramof

Publication year - 2003

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1621738

Subject(s) - diffraction , indium , molecular beam epitaxy , quantum well , x ray crystallography , materials science , gallium arsenide , analytical chemistry (journal) , condensed matter physics , epitaxy , crystallography , molecular physics , chemistry , optoelectronics , optics , physics , nanotechnology , layer (electronics) , laser , chromatography

Calculations using the dynamical theory of diffraction together with a sample model which considers the segregation of indium atoms were employed to fit the high-resolution x-ray spectra of strained InGaAs/GaAs quantum wells grown by molecular-beam epitaxy. The segregation coefficients obtained from the best fits to the experimental data of samples grown at different temperatures are in excellent agreement with the expected values and confirm that x-ray diffraction is a valuable tool for the investigation of the segregation phenomenon.

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