Open AccessImplantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition
Author(s) -
Qiang Gao,
Prakash N. K. Deenapanray,
Hark Hoe Tan,
C. Jagadish
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1621089
Subject(s) - fluence , sheet resistance , materials science , chemical vapor deposition , electrical resistivity and conductivity , ion implantation , thermal stability , resistive touchscreen , optoelectronics , analytical chemistry (journal) , layer (electronics) , electrical resistance and conductance , electrical conductor , nitrogen , ion , chemistry , nanotechnology , composite material , organic chemistry , engineering , chromatography , electrical engineering
The electrical isolation of p-type GaAs12xNx epilayers ( x50.6%, 1.4%, and 2.3%! produced by H, Li, C, or O ion implantation and its thermal stability in nominally undoped GaAs0.986N0.014 epilayers were investigated. Results show that the sheet resistance of p-type GaAsN layers can be increased by about five or six orders of magnitude by ion implantation and the threshold fluence ( F th )t o convert a conductive layer to a highly resistive one depends on the original free carrier concentration and the number of implantation-generated atomic displacements, and does not depend on the nitrogen content. The thermal stability of electrical isolation in GaAsN depends on the ratio of the final fluence to the threshold fluence. The electrical isolation can be preserved up to 550 °C when the accumulated fluence is above 3.3 Fth .© 2003 American Institute of Physics. @DOI: 10.1063/1.1621089#
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