Observation of huge nonlinear absorption enhancement near exciton resonance in GaN | Zendy

KungHsuan Lin | Zendy; Gia-Wei Chern | Zendy; Yin-Chieh Huang | Zendy; S. Keller | Zendy; Steven P. DenBaars | Zendy; ChiKuang Sun | Zendy

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Observation of huge nonlinear absorption enhancement near exciton resonance in GaN

Author(s) -

KungHsuan Lin,

Gia-Wei Chern,

Yin-Chieh Huang,

S. Keller,

Steven P. DenBaars,

ChiKuang Sun

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1619218

Subject(s) - exciton , dephasing , absorption (acoustics) , ionization , resonance (particle physics) , atomic physics , materials science , attenuation coefficient , absorption spectroscopy , spectroscopy , photon , two photon absorption , wide bandgap semiconductor , molecular physics , condensed matter physics , optoelectronics , chemistry , physics , optics , laser , ion , organic chemistry , composite material , quantum mechanics

Huge nonlinear-absorption enhancement was observed in GaN system at the excitonic transition wavelength. This excitonic enhancement is attributed to four-wave-mixing type nonlinear processes. The peak nonlinear coefficient is at least 3000 cm/GW corresponding to an enhancement factor of >200. The dephasing time of the exciton was also observed to be 60-160 fs in GaN thin film at room temperature.

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