Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys | Zendy

K. M. Yu | Zendy; W. Walukiewicz | Zendy; Junqiao Wu | Zendy; W. Shan | Zendy; J. W. Beeman | Zendy; Michael A. Scarpulla | Zendy; O. D. Dubón | Zendy; M. C. Ridgway | Zendy; D. E. Mars | Zendy; D. R. Chamberlin | Zendy

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Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys

Author(s) -

K. M. Yu,

W. Walukiewicz,

Junqiao Wu,

W. Shan,

J. W. Beeman,

Michael A. Scarpulla,

O. D. Dubón,

M. C. Ridgway,

D. E. Mars,

D. R. Chamberlin

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1616980

Subject(s) - passivation , alloy , annealing (glass) , materials science , doping , ion implantation , nitrogen , ion , semiconductor , silicon , metallurgy , optoelectronics , chemistry , nanotechnology , layer (electronics) , organic chemistry

This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, U.S. Department of Energy, under Contract No. DE-AC03-76SF00098. One of the authors ~M.A.S.! acknowledges support by an NSF graduate research fellowship.

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