Open AccessErratum: “Interface Properties and Structural Evolution of TiN/Si and TiN/GaN Heterostructures” [J. Appl. Phys. 93, 989 (2003)]
Author(s) -
P. Patsalas,
S. Logothetidis
Publication year - 2003
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1609645
Subject(s) - tin , heterojunction , materials science , interface (matter) , condensed matter physics , wide bandgap semiconductor , optoelectronics , engineering physics , physics , metallurgy , composite material , capillary number , capillary action
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