Open AccessTime evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon
Author(s) -
B. Colombeau,
N. E. B. Cowern,
F. Cristiano,
Paulo Victor Cuesta Calvo,
N. Cherkashin,
Y. Lamrani,
A. Claverie
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1608489
Subject(s) - silicon , materials science , transmission electron microscopy , dissolution , dislocation , crystallographic defect , diffusion , chemical physics , crystalline silicon , transient (computer programming) , sink (geography) , molecular physics , crystallography , condensed matter physics , optoelectronics , composite material , nanotechnology , chemistry , thermodynamics , physics , cartography , computer science , geography , operating system
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