Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells | Zendy

K. I. Kolokolov | Zendy; CunZheng Ning | Zendy

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Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells

Author(s) -

K. I. Kolokolov,

CunZheng Ning

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1605236

Subject(s) - quantum well , doping , condensed matter physics , optoelectronics , materials science , charge carrier density , electron , physics , optics , laser , quantum mechanics

We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb quantum wells (QWs) to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 1/cm, thus providing an important alternative material system in the midinfrared wavelength range. We also study the TE and TM gain as functions of doping level and intrinsic electron–hole density.

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