A resonant spin lifetime transistor | Zendy

Xavier Cartoixà | Zendy; David Z. Ting | Zendy; Y. C. Chang | Zendy

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A resonant spin lifetime transistor

Author(s) -

Xavier Cartoixà,

David Z. Ting,

Y. C. Chang

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1601693

Subject(s) - spintronics , spins , transistor , spin transistor , ferromagnetism , biasing , spin (aerodynamics) , condensed matter physics , common emitter , optoelectronics , bipolar junction transistor , spinplasmonics , materials science , relaxation (psychology) , coulomb blockade , voltage , spin hall effect , physics , electron , spin polarization , quantum mechanics , psychology , social psychology , thermodynamics

We present a device concept for a spintronictransistor based on the spin relaxation properties a two-dimensional electron gas(2DEG). The device design is very similar to that of the Datta and Das spin transistor. However, our proposed device works in the diffusive regime rather than in the ballistic regime. This eases lithographical and processing requirements. The switching action is achieved through the biasing of a gate contact, which controls the lifetime of spins injected into the 2DEG from a ferromagnetic emitter, thus allowing the traveling spins to be either aligned with a ferromagnetic collector or randomizing them before collection. The device configuration can easily be turned into a memory and a readout head for magnetically stored information

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