Open AccessTransport in a gated Al0.18Ga0.82N/GaN electron system
Author(s) -
J. R. Juang,
Tsai-Yu Huang,
TseMing Chen,
Ming-Gu Lin,
GilHo Kim,
Youngkwan Lee,
ChiTe Liang,
DaRen Hang,
Y. F. Chen,
Jen-Inn Chyi
Publication year - 2003
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1594818
Subject(s) - electron mobility , scattering , electron density , materials science , condensed matter physics , heterojunction , electron , charge carrier density , induced high electron mobility transistor , voltage , optoelectronics , high electron mobility transistor , transistor , physics , doping , optics , quantum mechanics
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