Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP | Zendy

Nikolai I. Georgiev | Zendy; T. Dekorsy | Zendy; F. Eichhorn | Zendy; M. Helm | Zendy; M. P. Semtsiv | Zendy; W. T. Masselink | Zendy

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Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP

Author(s) -

Nikolai I. Georgiev,

T. Dekorsy,

F. Eichhorn,

M. Helm,

M. P. Semtsiv,

W. T. Masselink

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1592315

Subject(s) - superlattice , materials science , quantum well , optoelectronics , gallium arsenide , absorption (acoustics) , wavelength , diffraction , photoluminescence , absorption spectroscopy , optics , laser , physics , composite material

We have studied intersubband absorption in strain compensated InxGa1−xAs/AlAs/InyAl1−yAs multiple quantum wells and superlattices grown on InP. X-ray diffraction shows that the layers are pseudomorphically strained and exhibit slight compositional grading of the interfaces. Owing to the high AlAs barriers, the intersubband absorption can be tailored to wavelengths shorter than 2 μm. In some samples, a small, but non-negligible absorption is also observed with s-polarized light.

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