A turnstile electron-spin entangler in semiconductors
Author(s) -
Claudia Sifel,
Ulrich Hohenester
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1590425
Subject(s) - turnstile , electron , quantum tunnelling , spin (aerodynamics) , physics , quantum entanglement , condensed matter physics , quantum dot , exciton , semiconductor , relaxation (psychology) , quantum , quantum mechanics , philosophy , linguistics , thermodynamics , psychology , social psychology
We propose a single-electron doped quantum dot in a field-effect structure asan optically triggered turnstile for spin-entangled electrons. A short laserpulse excites a charged exciton, whose quantum properties are transferredthrough tunneling and relaxation to the spin entanglement between electrons inthe dot and contact. We identify the pertinent disentanglement mechanisms, anddiscuss experimental detection and possible application schemes.Comment: 3 pages, 1 figure; to appear in Appl. Phys. Let
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom