Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis | Zendy

P. Normand | Zendy; E. Kapetanakis | Zendy; Panagiotis Dimitrakis | Zendy; D. Tsoukalas | Zendy; K. Beltsios | Zendy; N. Cherkashin | Zendy; C. Bonafos | Zendy; G. Benassayag | Zendy; H. Coffin | Zendy; A. Claverie | Zendy; V. Soncini | Zendy; Aditya Agarwal | Zendy; Mike Ameen | Zendy

Open Access

Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis

Author(s) -

P. Normand,

E. Kapetanakis,

Panagiotis Dimitrakis,

D. Tsoukalas,

K. Beltsios,

N. Cherkashin,

C. Bonafos,

G. Benassayag,

H. Coffin,

A. Claverie,

V. Soncini,

Aditya Agarwal,

Mike Ameen

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1588378

Subject(s) - materials science , annealing (glass) , silicon , optoelectronics , ion implantation , nanocrystal , oxide , silicon dioxide , thin film , capacitor , fabrication , inert , nanotechnology , ion , voltage , composite material , metallurgy , chemistry , electrical engineering , medicine , alternative medicine , organic chemistry , engineering , pathology

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