Open AccessSynthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs
Author(s) -
K. M. Yu,
W. Walukiewicz,
Michael A. Scarpulla,
O. D. Dubón,
Junqiao Wu,
Jacek B. Jasiński,
Z. LilientalWeber,
J. W. Beeman,
Manoj R. Pillai,
Michael J. Aziz
Publication year - 2003
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1582393
Subject(s) - annealing (glass) , materials science , fluence , thin film , epitaxy , pulsed laser deposition , alloy , laser , analytical chemistry (journal) , optoelectronics , pulsed laser , metallurgy , optics , nanotechnology , chemistry , physics , layer (electronics) , chromatography
We present a systematic investigation on the formation of the highly mismatched alloy GaN{sub x}As{sub 1-x} using N{sup +}-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaN{sub x}As{sub 1-x} with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N{sup +} implantation dose, laser energy fluence and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaN{sub x}As{sub 1-x} films are discussed
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