Scaling behavior and parasitic series resistance in disordered organic field-effect transistors | Zendy

E. J. Meijer | Zendy; Gerwin H. Gelinck | Zendy; E. van Veenendaal | Zendy; B.H. Huisman | Zendy; Dago M. de Leeuw | Zendy; T. M. Klapwijk | Zendy

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Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Author(s) -

E. J. Meijer,

Gerwin H. Gelinck,

E. van Veenendaal,

B.H. Huisman,

Dago M. de Leeuw,

T. M. Klapwijk

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1581389

Subject(s) - scaling , organic semiconductor , parasitic element , transistor , materials science , field effect transistor , equivalent series resistance , semiconductor , threshold voltage , optoelectronics , condensed matter physics , voltage , electrical engineering , physics , mathematics , engineering , geometry

The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the M? range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility

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