Structural and electrical properties of c-axis epitaxial homologous Srm−3Bi4TimO3m+3 (m=3, 4, 5, and 6) thin films | Zendy

S. T. Zhang | Zendy; Y. F. Chen | Zendy; H. P. Sun | Zendy; Xiaoqing Pan | Zendy; Weishi Tan | Zendy; Z. G. Liu | Zendy; Ming Niu | Zendy

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Structural and electrical properties of c-axis epitaxial homologous Srm−3Bi4TimO3m+3 (m=3, 4, 5, and 6) thin films

Author(s) -

S. T. Zhang,

Y. F. Chen,

H. P. Sun,

Xiaoqing Pan,

Weishi Tan,

Z. G. Liu,

Ming Niu

Publication year - 2003

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1579864

Subject(s) - epitaxy , transmission electron microscopy , materials science , thin film , diffraction , pulsed laser deposition , dielectric , electron diffraction , microstructure , scanning electron microscope , crystallography , microwave , single crystal , analytical chemistry (journal) , optics , optoelectronics , chemistry , nanotechnology , composite material , physics , layer (electronics) , quantum mechanics , chromatography

c-axis epitaxial thin films of Bi-layered homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m=3,(m=3, 4, 5, and 6) were fabricated on (001) SrTiO3SrTiO3 single crystal substrates by pulsed laser deposition, respectively. Microstructures of the films were systematically characterized by x-ray diffraction (including θ–2θ scans, rocking curve scans and ϕ scans), atomic force microscopy, and transmission electron microscope. Epitaxial relations were established to be (001)Srm−3Bi4TimO3m+3∥(001)SrTiO3(001)Srm−3Bi4TimO3m+3∥(001)SrTiO3 and [10]Srm−3Bi4TimO3m+3∥[010]SrTiO3[11̄0]Srm−3Bi4TimO3m+3∥[010]SrTiO3 by ϕ scans and selected area diffraction. A special kind of atomic shift along the [001] direction and a slight atomic vibration of TiO6TiO6 octahedra were revealed and discussed. The room-temperature dielectric constants of these epitaxial films measured by using an evanescent microwave probe were 245±23,245±23, 237±13,237±13, 272±19,272±19, and 221±20221±20 for films with m=3,m=3, 4, 5, and 6 respectively. © 2003 American Institute of Physics

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