Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution | Zendy

ChingFuh Lin | Zendy; Yi-Shin Su | Zendy; Di-Ku Yu | Zendy; ChaoHsin Wu | Zendy; Bing-Ruey Wu | Zendy

Open Access

Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution

Author(s) -

ChingFuh Lin,

Yi-Shin Su,

Di-Ku Yu,

ChaoHsin Wu,

Bing-Ruey Wu

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1577384

Subject(s) - lasing threshold , quantum well , atmospheric temperature range , redistribution (election) , laser , diode , materials science , condensed matter physics , band gap , optoelectronics , wavelength , physics , optics , thermodynamics , politics , political science , law

Laser diodes with nonidentical multiple quantum wells could have the lasing wavelength very insensitive to temperature variation. For temperature varying from 33 to 260 K, the lasing energy changes less than 5 meV, while the band gap energy changes more than 50 meV. The origin is due to the strongly temperature-dependent Fermi–Dirac distribution, which favors carriers in high-energy states at large temperature. The temperature-induced carrier redistribution could even cause negative characteristic temperature for a certain temperature range because the low-energy quantum wells behave like reservoirs to overcome the detrimental influence of temperature.

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