Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals | Zendy

J. WongLeung | Zendy; Martin S. Janson | Zendy; B. G. Svensson | Zendy

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Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

Author(s) -

J. WongLeung,

Martin S. Janson,

B. G. Svensson

Publication year - 2003

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1569972

Subject(s) - planar , wafer , materials science , tilt (camera) , ion implantation , crystal (programming language) , implant , penetration (warfare) , orientation (vector space) , ion , optoelectronics , geometry , chemistry , mathematics , medicine , computer graphics (images) , organic chemistry , surgery , operations research , computer science , programming language

The authors acknowledge the STINT ~Swedish Foundation for international cooperation in research and higher education! program and Australian Research Council for support under the Discovery grant and fellowship program.

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