Simulation of the dc plasma in carbon nanotube growth | Zendy

David Hash | Zendy; Deepak Bose | Zendy; T. R. Govindan | Zendy; M. Meyyappan | Zendy

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Simulation of the dc plasma in carbon nanotube growth

Author(s) -

David Hash,

Deepak Bose,

T. R. Govindan,

M. Meyyappan

Publication year - 2003

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1568155

Subject(s) - carbon nanotube , plasma , acetylene , argon , chemical vapor deposition , tungsten , protein filament , materials science , nanotube , ion , atomic physics , carbon nanotube quantum dot , electron temperature , chemistry , nanotechnology , composite material , physics , organic chemistry , quantum mechanics , metallurgy

A model for the dc plasma used in carbon nanotube growth is presented, and one-dimensional simulations of an acetylene/ammonia/argon system are performed. The effect of dc bias is illustrated by examining electron temperature, electron and ion densities, and neutral densities. Introducing a tungsten filament in the dc plasma, as in hot filament chemical vapor deposition with plasma assistance, shows negligible influence on the system characteristics.

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