Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing | Zendy

S. Hernández | Zendy; Noelia Blanco | Zendy; I. Mártil | Zendy; G. González-Dı́az | Zendy; R. Cuscó | Zendy; L. Artús | Zendy

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Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

Author(s) -

S. Hernández,

Noelia Blanco,

I. Mártil,

G. González-Dı́az,

R. Cuscó,

L. Artús

Publication year - 2003

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1565175

Subject(s) - raman spectroscopy , raman scattering , annealing (glass) , arsenic , materials science , substrate (aquarium) , analytical chemistry (journal) , phosphorus , gallium arsenide , photoluminescence , optoelectronics , chemistry , metallurgy , optics , environmental chemistry , oceanography , physics , geology

We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman signal associated with InP-like modes was detected in the annealed samples. The effect is also observed in samples where the substrate was protected by a SiNx:H capping and were annealed in arsenic atmosphere, thus ruling out the possibility of a surface contamination by atmospheric phosphorus evaporated from the InP substrate.. Protruding regions. of a few microns were observed on the surface, which were identified as misoriented In1-xGaP and InP crystals by means of micro-Raman measurements. (C) 2003 American Institute of Physics

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