Annealing of isolated amorphous zones in silicon | Zendy

S. E. Donnelly | Zendy; R. C. Birtcher | Zendy; Vladimir Vishnyakov | Zendy; G. Carter | Zendy

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Annealing of isolated amorphous zones in silicon

Author(s) -

S. E. Donnelly,

R. C. Birtcher,

Vladimir Vishnyakov,

G. Carter

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1562336

Subject(s) - annealing (glass) , amorphous solid , silicon , transmission electron microscopy , materials science , amorphous silicon , analytical chemistry (journal) , atmospheric temperature range , volume fraction , mineralogy , crystallography , chemistry , crystalline silicon , nanotechnology , metallurgy , composite material , physics , thermodynamics , chromatography

In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability.

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