GaN-based waveguide devices for long-wavelength optical communications | Zendy

Rongqing Hui | Zendy; Saeed Taherion | Zendy; Yukun Wan | Zendy; J. Li | Zendy; S. X. Jin | Zendy; J. Y. Lin | Zendy; H. X. Jiang | Zendy

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GaN-based waveguide devices for long-wavelength optical communications

Author(s) -

Rongqing Hui,

Saeed Taherion,

Yukun Wan,

J. Li,

S. X. Jin,

J. Y. Lin,

H. X. Jiang

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1557790

Subject(s) - optoelectronics , materials science , wavelength , waveguide , photonic integrated circuit , photonics , semiconductor , infrared , heterojunction , optical communication , optics , wide bandgap semiconductor , optical fiber , electronic circuit , physics , quantum mechanics

Refractive indices of AlxGa1−xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed.

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