Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells | Zendy

C. Carmody | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

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Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

Author(s) -

C. Carmody,

Hark Hoe Tan,

C. Jagadish

Publication year - 2003

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1555273

Subject(s) - photoluminescence , ion implantation , materials science , quantum well , gallium arsenide , scattering , ion , layer (electronics) , optoelectronics , analytical chemistry (journal) , chemistry , nanotechnology , optics , laser , physics , organic chemistry , chromatography

We have investigated the effect of implantation at room temperature and 200 °C into lattice matched InP/InGaAs quantum well structures capped with InP and InGaAs layers. P− ions of 20 keV were implanted into the cap layer at doses of 1×1012−1×1014 cm−2. The dose dependent evolution of shifts in photoluminescence energy for the InP capped sample was found to be affected by the implant temperature. Rutherford back scattering measurements show that the nature of the damage induced at different implant temperatures is responsible for this behavior. It was found that the InGaAs capped sample was less sensitive to the implant temperature than the InP capped sample.

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