Comment on “Schottky barrier rectifier with high current density using vanadium as barrier metal” [Appl. Phys. Lett., 79, 860 (2001)]
Author(s) -
Yu-Long Jiang,
Guo-Ping Ru,
Xin-Ping Qu,
Bing-Zong Li
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1555268
Subject(s) - vanadium , schottky barrier , rectifier (neural networks) , metal–semiconductor junction , condensed matter physics , materials science , metal , schottky diode , current density , chemistry , optoelectronics , physics , quantum mechanics , diode , metallurgy , computer science , machine learning , recurrent neural network , artificial neural network , stochastic neural network
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