z-logo
open-access-imgOpen Access
Comment on “Schottky barrier rectifier with high current density using vanadium as barrier metal” [Appl. Phys. Lett., 79, 860 (2001)]
Author(s) -
Yu-Long Jiang,
Guo-Ping Ru,
Xin-Ping Qu,
Bing-Zong Li
Publication year - 2003
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1555268
Subject(s) - vanadium , schottky barrier , rectifier (neural networks) , metal–semiconductor junction , condensed matter physics , materials science , metal , schottky diode , current density , chemistry , optoelectronics , physics , quantum mechanics , diode , metallurgy , computer science , machine learning , recurrent neural network , artificial neural network , stochastic neural network

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom