Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor metal-oxide-semiconductor design
Author(s) -
Marc Le Roy,
Éric Lheurette,
O. Vanbésien,
D. Lippens
Publication year - 2003
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1544650
Subject(s) - dielectric , quantum tunnelling , heterojunction , materials science , optoelectronics , leakage (economics) , permittivity , semiconductor , fabrication , high κ dielectric , voltage , oxide , engineering physics , nanotechnology , electrical engineering , physics , engineering , medicine , alternative medicine , pathology , economics , macroeconomics , metallurgy
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