Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy | Zendy

Handong Sun | Zendy; Martin D. Dawson | Zendy; Muhammad Zamir Othman | Zendy; J.C.L. Yong | Zendy; Judy M Rorison | Zendy; P. Gilet | Zendy; L. Grenouillet | Zendy; A. Million | Zendy

Open Access

Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy

Author(s) -

Handong Sun,

Martin D. Dawson,

Muhammad Zamir Othman,

J.C.L. Yong,

Judy M Rorison,

P. Gilet,

L. Grenouillet,

A. Million

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1539921

Subject(s) - photoluminescence , quantum well , spectroscopy , photoluminescence excitation , electron , condensed matter physics , excitation , gallium arsenide , band gap , materials science , chemistry , optoelectronics , physics , optics , laser , quantum mechanics

We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%-1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells

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