Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy | Zendy

Jeonghyun Hwang | Zendy; W. J. Schaff | Zendy; L.F. Eastman | Zendy; S. Bradley | Zendy; L. J. Brillson | Zendy; D. C. Look | Zendy; Junqiao Wu | Zendy; Władek Walukiewicz | Zendy; Madalina Furis | Zendy; Alexander N. Cartwright | Zendy

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Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy

Author(s) -

Jeonghyun Hwang,

W. J. Schaff,

L.F. Eastman,

S. Bradley,

L. J. Brillson,

D. C. Look,

Junqiao Wu,

Władek Walukiewicz,

Madalina Furis,

Alexander N. Cartwright

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1534395

Subject(s) - cathodoluminescence , molecular beam epitaxy , mole fraction , photoluminescence , doping , materials science , sapphire , analytical chemistry (journal) , dopant , epitaxy , chemistry , laser , optoelectronics , luminescence , optics , nanotechnology , physics , layer (electronics) , chromatography

Very high levels of n-type doping of AlxGa1−xN alloys were recently achieved by rf plasma-induced molecular-beam epitaxy on sapphire substrates and Si as a dopant. Electron concentrations were obtained up to 1.25×1020 cm−3 when the Al mole fraction was 50%, and 8.5×1019 cm−3 electrons were measured even when the Al mole fraction was 80%. Other material properties were determined by optical absorption, photoluminescence, cathodoluminescence, x-ray diffraction, and atomic force microscopy measurements and high optical and morphological qualities were shown.

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