Observation of defect complexes containing Ga vacancies in GaAsN | Zendy

Juha Toivonen | Zendy; Timo Hakkarainen | Zendy; M. Sopanen | Zendy; Harri Lipsanen | Zendy; J. Oila | Zendy; K. Saarinen | Zendy

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Observation of defect complexes containing Ga vacancies in GaAsN

Author(s) -

Juha Toivonen,

Timo Hakkarainen,

M. Sopanen,

Harri Lipsanen,

J. Oila,

K. Saarinen

Publication year - 2003

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1533843

Subject(s) - vacancy defect , photoluminescence , positron annihilation spectroscopy , annealing (glass) , materials science , annihilation , spectroscopy , crystallography , recombination , positron annihilation , condensed matter physics , molecular physics , positron , optoelectronics , chemistry , metallurgy , physics , nuclear physics , electron , biochemistry , quantum mechanics , gene

Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm−3 with increasing N composition and decreases after annealing at 700 °C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.Peer reviewe

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