Open AccessTip-gating effect in scanning impedance microscopy of nanoelectronic devices
Author(s) -
Sergei V. Kalinin,
Dawn A. Bonnell,
Marcus Freitag,
A. T. Charlie Johnson
Publication year - 2002
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1531833
Subject(s) - scanning gate microscopy , scanning probe microscopy , scanning ion conductance microscopy , gating , scanning capacitance microscopy , materials science , microscopy , vibrational analysis with scanning probe microscopy , electrical impedance , scanning confocal electron microscopy , carbon nanotube , non contact atomic force microscopy , optoelectronics , scanning electron microscope , nanotechnology , optics , conductive atomic force microscopy , atomic force microscopy , physics , biophysics , composite material , quantum mechanics , biology
Electronic transport in semiconducting single-wall carbon nanotubes isstudied by combined scanning gate microscopy and scanning impedance microscopy(SIM). Depending on the probe potential, SIM can be performed in both invasiveand non-invasive mode. High-resolution imaging of the defects is achieved whenthe probe acts as a local gate and simultaneously an electrostatic probe oflocal potential. A class of weak defects becomes observable even if they arelocated in the vicinity of strong defects. The imaging mechanism of tip-gatingscanning impedance microscopy is discussed.Comment: 11 pages, 3 figures, to be published in Appl. Phys. Let
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