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Electronic transport in semiconducting single-wall carbon nanotubes isstudied by combined scanning gate microscopy and scanning impedance microscopy(SIM). Depending on the probe potential, SIM can be performed in both invasiveand non-invasive mode. High-resolution imaging of the defects is achieved whenthe probe acts as a local gate and simultaneously an electrostatic probe oflocal potential. A class of weak defects becomes observable even if they arelocated in the vicinity of strong defects. The imaging mechanism of tip-gatingscanning impedance microscopy is discussed.Comment: 11 pages, 3 figures, to be published in Appl. Phys. Let

Tip-gating effect in scanning impedance microscopy of nanoelectronic devices