On the nature of radiative recombination in GaAsN | Zendy

Baoquan Sun | Zendy; M. Gál | Zendy; Qiang Gao | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

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On the nature of radiative recombination in GaAsN

Author(s) -

Baoquan Sun,

M. Gál,

Qiang Gao,

Hark Hoe Tan,

C. Jagadish

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1526913

Subject(s) - photoluminescence , recombination , spontaneous emission , delocalized electron , exciton , radiative transfer , electron , non radiative recombination , spectroscopy , atomic physics , physics , materials science , condensed matter physics , molecular physics , optoelectronics , chemistry , optics , laser , gene , biochemistry , quantum mechanics

Radiative recombination at low temperatures in GaAsN is often associated with localized excitons. In this short note, we report results from high-resolution time-resolved photoluminescence spectroscopy that indicate that excitons, localized or otherwise, cannot be involved in the recombination process of this alloy system. The risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected, and found from excitonic recombination in other III–V materials, such as GaAs. We suggest that the radiative recombination in GaAsN takes place between localized electrons and delocalized holes.

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