Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain | Zendy

S. K. Zhang | Zendy; W. B. Wang | Zendy; I. Shtau | Zendy; Feng Yun | Zendy; Lei He | Zendy; H. Morkoç̌ | Zendy; Xiaocong Zhou | Zendy; M. C. Tamargo | Zendy; R. R. Alfano | Zendy

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Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain

Author(s) -

S. K. Zhang,

W. B. Wang,

I. Shtau,

Feng Yun,

Lei He,

H. Morkoç̌,

Xiaocong Zhou,

M. C. Tamargo,

R. R. Alfano

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1526166

Subject(s) - photocurrent , responsivity , photodetector , optoelectronics , materials science , heterojunction , ultraviolet , photoconductivity , wide bandgap semiconductor , gallium nitride , trapping , semiconductor , nanotechnology , ecology , layer (electronics) , biology

We report on a backilluminated GaN/Al0.18Ga0.82N heterojunction ultraviolet (UV) photodetector with high internal gain based on metal-semiconductor-metal structures. A narrow band pass spectral response between 365 and 343 nm was achieved. When operating in dc mode, the responsivity reaches up to the order of 102 A/W under weak UV illumination, which is due to enormous internal gain up to 103. The linear dependence of photocurrent on bias and its square root dependence on optical power are found and explained by a trapping and recombination model. The high photocurrent gain is attributed to trapping and recombination centers with an acceptor character induced by dislocations in GaN.

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