On the effects of implantation temperature in helium implanted silicon | Zendy

E. Oliviero | Zendy; MarieLaure David | Zendy; M. F. Beaufort | Zendy; J. F. Barbot | Zendy; A. van Veen | Zendy

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On the effects of implantation temperature in helium implanted silicon

Author(s) -

E. Oliviero,

MarieLaure David,

M. F. Beaufort,

J. F. Barbot,

A. van Veen

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1525059

Subject(s) - ion implantation , helium , silicon , materials science , fluence , transmission electron microscopy , thermal desorption , desorption , analytical chemistry (journal) , atomic physics , ion , chemistry , optoelectronics , nanotechnology , adsorption , physics , organic chemistry , chromatography

He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation temperature. However, it is found that helium release from cavities is governed by a single mechanism regardless of the implantation temperature.Radiation, Radionuclides and ReactorsApplied Science

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