Exciton–exciton interaction engineering in coupled GaN quantum dots | Zendy

S. De Rinaldis | Zendy; Irene D’Amico | Zendy; Fausto Rossi | Zendy

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Exciton–exciton interaction engineering in coupled GaN quantum dots

Author(s) -

S. De Rinaldis,

Irene D’Amico,

Fausto Rossi

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1519353

Subject(s) - exciton , quantum dot , biexciton , semiconductor , physics , coupling (piping) , oscillator strength , quantum , optoelectronics , quantum mechanics , condensed matter physics , materials science , metallurgy , spectral line

We present a fully three-dimensional study of the multiexciton opticalresponse of vertically coupled GaN-based quantum dots via adirect-diagonalization approach. The proposed analysis is crucial inunderstanding the fundamental properties of few-particle/exciton interactionsand, more important, may play an essential role in the design/optimization ofsemiconductor-based quantum information processing schemes. In particular, wefocus on the interdot exciton-exciton coupling, key ingredient in recentlyproposed all-optical quantum processors. Our analysis demonstrates that thereis a large window of realistic parameters for which both biexcitonic shift andoscillator strength are compatible with such implementation schemes.Comment: 3 two-column pages, 3 figure

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