Open AccessAnisotropic pinning enhancement in Nb films with arrays of submicrometric Ni lines
Author(s) -
Daniel Jaque,
E. M. González,
J. I. Martı́n,
José V. Anguita,
J. L. Vicent
Publication year - 2002
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1512947
Subject(s) - vortex , condensed matter physics , dissipation , materials science , anisotropy , perpendicular , electron beam lithography , magnetic field , pinning force , superconductivity , type ii superconductor , niobium , lithography , physics , resist , optoelectronics , optics , nanotechnology , critical current , geometry , mathematics , layer (electronics) , quantum mechanics , metallurgy , thermodynamics
Arrays of submicrometric Ni lines have been fabricated in superconducting Nb films by electron beam lithography. In the mixed state, these arrays induce strong anisotropy in the dissipation behavior. The dissipation is reduced several orders of magnitude, in the whole applied magnetic field range, when the vortex motion is perpendicular to the Ni lines (applied current parallel to them) in comparison with dissipation of vortices moving parallel to the lines. In addition, for the samples studied in this work, a change in the slope of the rho(B) curves is observed when the vortices move perpendicular to the lines and the vortex lattice parameter matches the width of the Ni lines
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