Open AccessImpact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
Author(s) -
Shih-Wei Feng,
Yung-Chen Cheng,
Yi-Yin Chung,
C. C. Yang,
Yen-Sheng Lin,
Chen Hsu,
Kung-Jeng Ma,
Jen-Inn Chyi
Publication year - 2002
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1506393
Subject(s) - indium , photoluminescence , quantum well , exciton , optoelectronics , materials science , quantum dot , light emitting diode , indium nitride , carrier lifetime , electron mobility , transmission electron microscopy , electron , wide bandgap semiconductor , condensed matter physics , gallium nitride , nanotechnology , physics , optics , laser , quantum mechanics , silicon , layer (electronics)
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