Depth-profiling plasma-induced densification of porous low-k thin films using positronium annihilation lifetime spectroscopy | Zendy

Jianing Sun | Zendy; David W. Gidley | Zendy; Yifan Hu | Zendy; W. E. Frieze | Zendy; E. Todd Ryan | Zendy

Open Access

Depth-profiling plasma-induced densification of porous low-k thin films using positronium annihilation lifetime spectroscopy

Author(s) -

Jianing Sun,

David W. Gidley,

Yifan Hu,

W. E. Frieze,

E. Todd Ryan

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1501767

Subject(s) - positronium , materials science , positron annihilation spectroscopy , porosity , dielectric , plasma , x ray photoelectron spectroscopy , spectroscopy , thin film , annihilation , ashing , analytical chemistry (journal) , porous medium , molecular physics , composite material , positron annihilation , chemistry , nuclear magnetic resonance , optoelectronics , nanotechnology , positron , physics , nuclear physics , quantum mechanics , chromatography , electron

Positronium annihilation lifetime spectroscopy (PALS) has been used to depth profile the densification induced in a porous low-dielectric constant (k) thin film by typical device integration processing, including exposure to plasmas and oxygen ashing. Such “integration damage” has previously been observed as an undesirable increase in k accompanied by shrinkage in the porous film thickness. PALS confirms that the structural damage is confined to a surface layer of collapsed pores with the underlying pores being undamaged. The dense layer thickness determined by PALS increases with plasma exposure time. © 2002 American Institute of Physics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research