Tunable photonic strength in porous GaP | Zendy

Jaime Gómez Rivas | Zendy; Ad Lagendijk | Zendy; R.W. Tjerkstra | Zendy; Daniël Vanmaekelbergh | Zendy; John J. Kelly | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Tunable photonic strength in porous GaP

Author(s) -

Jaime Gómez Rivas,

Ad Lagendijk,

R.W. Tjerkstra,

Daniël Vanmaekelbergh,

John J. Kelly

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1485316

Subject(s) - gallium phosphide , materials science , etching (microfabrication) , photonics , optoelectronics , dopant , porosity , light scattering , photonic crystal , porous medium , semiconductor , absorption (acoustics) , scattering , doping , optics , nanotechnology , composite material , physics , layer (electronics)

The light-scattering properties of porous gallium phosphide, prepared by electrochemical etching, are investigated. We show that the photonic strength of the porous semiconductor can be tuned from weak to extremely strong. This tunability is related to the density and size of the pores, which are controlled by the dopant density of the GaP crystals, and the etching potential. Moreover, electrochemical etching does not introduce any significant optical absorption, which makes porous GaP suitable for many photonic applications.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research