Fabrication of Si single-electron transistors having double SiO2 barriers | Zendy

Yuhei Ito | Zendy; T. Hatano | Zendy; Anri Nakajima | Zendy; Shin Yokoyama | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Fabrication of Si single-electron transistors having double SiO2 barriers

Author(s) -

Yuhei Ito,

T. Hatano,

Anri Nakajima,

Shin Yokoyama

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1485306

Subject(s) - coulomb blockade , fabrication , materials science , transistor , optoelectronics , quantum dot , oscillation (cell signaling) , silicon , nanotechnology , voltage , electrical engineering , chemistry , medicine , alternative medicine , pathology , engineering , biochemistry

We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystalline Si (poly-Si) dot. The fabrication method of this device is completely compatible with the complementary metal–oxide–semiconductor technology, and the position of the poly-Si dot is self-aligned between the source and drain regions. The device exhibits drain current (Id) oscillation against gate voltage. From the dot size dependence of the electrical characteristics, the Id oscillation is considered to be due to the Coulomb blockade effect caused by poly-Si grains in the poly-Si dot. The self-alignment of the poly-Si dot in the fabrication process also means that the SET is promising for practical use.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research