Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices | Zendy

Jennifer Heath | Zendy; J. David Cohen | Zendy; William N. Shafarman | Zendy; Dongxiang Liao | Zendy; Angus Rockett | Zendy

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Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices

Author(s) -

Jennifer Heath,

J. David Cohen,

William N. Shafarman,

Dongxiang Liao,

Angus Rockett

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1485301

Subject(s) - materials science , band gap , deep level transient spectroscopy , optoelectronics , recombination , spectral line , wide bandgap semiconductor , spectroscopy , valence band , molecular physics , atomic physics , chemistry , silicon , physics , biochemistry , quantum mechanics , astronomy , gene

Defects in the band gap of CuIn1−xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.

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