Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers | Zendy

Prakash N. K. Deenapanray | Zendy; Bin Gong | Zendy; Robert N. Lamb | Zendy; A. Martin | Zendy; Lan Fu | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

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Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Author(s) -

Prakash N. K. Deenapanray,

Bin Gong,

Robert N. Lamb,

A. Martin,

Lan Fu,

Hark Hoe Tan,

C. Jagadish

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1484244

Subject(s) - impurity , photoluminescence , materials science , doping , quantum well , deep level transient spectroscopy , x ray photoelectron spectroscopy , gallium arsenide , condensed matter physics , spectroscopy , molecular beam epitaxy , crystallographic defect , arsenic , optoelectronics , layer (electronics) , chemistry , epitaxy , silicon , nuclear magnetic resonance , nanotechnology , optics , metallurgy , laser , quantum mechanics , physics , organic chemistry

Two of the authors (P.N.K.D. and H.H.T.) gratefully acknowledge financial support by the Australian Research Council.

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