Electron field emission from excimer laser crystallized amorphous silicon | Zendy

Y. F. Tang | Zendy; S. Ravi P. Silva | Zendy; Bojan O. Boskovic | Zendy; J. M. Shan | Zendy; M.J. Rose | Zendy

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Electron field emission from excimer laser crystallized amorphous silicon

Author(s) -

Y. F. Tang,

S. Ravi P. Silva,

Bojan O. Boskovic,

J. M. Shan,

M.J. Rose

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1482141

Subject(s) - materials science , field electron emission , excimer laser , silicon , amorphous silicon , optoelectronics , laser , diode , substrate (aquarium) , amorphous solid , field emission display , optics , electron , crystalline silicon , chemistry , crystallography , oceanography , physics , quantum mechanics , geology

We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10−5 A (current densities≈0.04 A/cm2) at threshold fields less than 15 V/μm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged.

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