High frequency components of current fluctuations in semiconductor tunneling barriers | Zendy

Xavier Oriols | Zendy; Ferran Martı́n | Zendy; J. Suñé | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

High frequency components of current fluctuations in semiconductor tunneling barriers

Author(s) -

Xavier Oriols,

Ferran Martı́n,

J. Suñé

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1482136

Subject(s) - quantum tunnelling , spectral density , noise (video) , physics , semiconductor , condensed matter physics , current (fluid) , phase (matter) , noise spectrum , infrasound , semiconductor device , noise power , computational physics , power (physics) , materials science , optoelectronics , quantum mechanics , nanotechnology , acoustics , noise reduction , layer (electronics) , artificial intelligence , computer science , image (mathematics) , thermodynamics , statistics , mathematics

The power spectral density of current noise in phase-coherent semiconductortunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. An enhancement of the power spectral density of the current fluctuations is predicted for very high frequencies. The experimental measurement of this high frequency effect is discussed as a possible test of Bohm trajectories

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research