Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures | Zendy

Quazi D. M. Khosru | Zendy; Anri Nakajima | Zendy; Takashi Yoshimoto | Zendy; Shin Yokoyama | Zendy

Open Access

Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures

Author(s) -

Quazi D. M. Khosru,

Anri Nakajima,

Takashi Yoshimoto,

Shin Yokoyama

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1481194

Subject(s) - materials science , semiconductor , optoelectronics , capacitor , oxide , doping , semiconductor device , silicon , interface (matter) , metal , stress (linguistics) , nanotechnology , layer (electronics) , voltage , composite material , electrical engineering , linguistics , philosophy , capillary action , metallurgy , engineering , capillary number

A simple and effective method for the extraction of interface trap distribution in ultrathin metal–oxide–semiconductor (MOS) structures is presented. By a critical analysis of bipolar-pulse-induced currents through MOS capacitors, a technique is developed to determine the energy distribution of the interface traps without requiring the knowledge of surface potential and doping profile in the semiconductor. The proposed technique can be efficiently used to probe electrical stress, hot-carrier, and radiation-induced interfacial degradations in ultrathin MOS structures.

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