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Optical switching in midinfrared light-emitting diodes
Author(s) -
A. Krier,
V. V. Sherstnev,
H H Gao,
A. M. Monahov,
G. Hill
Publication year - 2002
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1470690
Subject(s) - electroluminescence , optoelectronics , light emitting diode , materials science , diode , double heterostructure , wide bandgap semiconductor , heterojunction , quenching (fluorescence) , optics , semiconductor laser theory , physics , fluorescence , layer (electronics) , composite material
We report on the optical quenching of electroluminescence in midinfrared light-emitting diodes operating at 3.0 mum. The source is based on a symmetrical double heterostructure with large band offsets and is effectively switched off using coherent visible light. (C) 2002 American Institute of Physics

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