Open AccessDislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties
Author(s) -
R. León,
S. A. Chaparro,
S. R. Johnson,
Carlos Navarro,
X. Jin,
Y. H. Zhang,
J. Siegert,
S. Marcinkevičius,
Xiaozhou Liao,
Jin Zou
Publication year - 2002
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1467963
Subject(s) - quantum dot , photoluminescence , dislocation , materials science , molecular beam epitaxy , condensed matter physics , epitaxy , gallium arsenide , optoelectronics , nanotechnology , physics , composite material , layer (electronics)
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