Tunable negative differential resistance controlled by spin blockade in single-electron transistors | Zendy

M. Ciorga | Zendy; Michel Pioro-Ladrière | Zendy; P. Zawadzki | Zendy; Paweł Hawrylak | Zendy; A. S. Sachrajda | Zendy

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Tunable negative differential resistance controlled by spin blockade in single-electron transistors

Author(s) -

M. Ciorga,

Michel Pioro-Ladrière,

P. Zawadzki,

Paweł Hawrylak,

A. S. Sachrajda

Publication year - 2002

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1459489

Subject(s) - coulomb blockade , condensed matter physics , electron , heterojunction , transistor , spin (aerodynamics) , biasing , materials science , relaxation (psychology) , spin transistor , optoelectronics , spin polarization , voltage , physics , spin hall effect , quantum mechanics , thermodynamics , psychology , social psychology

The single-electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements reveal well-defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot.Peer reviewed: NoNRC publication: Ye

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