Wavelength division multiplexing scheme for radio-frequency single electron transistors | Zendy

Thomas R. Stevenson | Zendy; Fernando Pellerano | Zendy; Carl M. Stahle | Zendy; Katherine Aidala | Zendy; R. J. Schoelkopf | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Wavelength division multiplexing scheme for radio-frequency single electron transistors

Author(s) -

Thomas R. Stevenson,

Fernando Pellerano,

Carl M. Stahle,

Katherine Aidala,

R. J. Schoelkopf

Publication year - 2002

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.1457648

Subject(s) - radio frequency , transistor , multiplexing , capacitance , electronic circuit , electronic engineering , frequency division multiplexing , electrical engineering , physics , optoelectronics , computer science , channel (broadcasting) , engineering , orthogonal frequency division multiplexing , voltage , electrode , quantum mechanics

We describe work on a wavelength division multiplexing scheme for radio-frequency single electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. Using discrete components, we made a two-channel demonstration of this concept and successfully reconstructed input signals with small levels of cross coupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced cross capacitance and inductance, and should allow 20 to 50 channels to be multiplexed.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research