Open AccessResponse to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. 80, 1492 (2002)]
Author(s) -
P. Pellegrino,
P. Lévêque,
H. Kortegaard-Nielsen,
J. WongLeung,
C. Jagadish,
B. G. Svensson
Publication year - 2002
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1455141
Subject(s) - vacancy defect , silicon , ion , materials science , atomic physics , ion implantation , molecular physics , chemistry , physics , condensed matter physics , optoelectronics , quantum mechanics
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