Open AccessComment on “Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation” [Appl. Phys. Lett. 78, 3442 (2001)]
Author(s) -
Nikolai Yarykin
Publication year - 2002
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1455140
Subject(s) - vacancy defect , ion , silicon , ion implantation , materials science , atomic physics , physics , condensed matter physics , optoelectronics , quantum mechanics
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