Open AccessErratum: “Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering” [J. Appl. Phys. 90, 4587 (2001)]
Author(s) -
Massimo V. Fischetti,
Deborah A. Neumayer,
E. Cartier
Publication year - 2002
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1427643
Subject(s) - condensed matter physics , scattering , electron mobility , materials science , phonon , semiconductor , phonon scattering , inversion (geology) , electron , metal , optoelectronics , oxide , physics , optics , quantum mechanics , geology , paleontology , structural basin , metallurgy
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